THERMAL QUENCHING IN DOPED LPCVD AMORPHOUS-SILICON HYDROGENATED BY ION-IMPLANTATION

被引：0
|
作者：
PIETRUSZKO, SM
机构：
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 164卷
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中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Quenched-in metastability was observed in unhydrogenated and hydrogenated boron-doped low pressure CVD amorphous Si. The equilibration temperatures T*have been determined. For the unhydrogenated films, in the region where efficient doping takes place, changes in the d.c. dark conductivity and the activation energy after quenching depend on the B concentration. The study of the influence of implanted hydrogen on thermally induced metastability in a-Si with different B concentration is reported.
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页码：255 / 258
页数：4
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