STUDY OF STRESS-INDUCED LEAKAGE CURRENT IN SCALED SIO2

被引：1
|
作者：
HAN, LK
WANG, HH
YAN, J
KWONG, DL
机构：
[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 14期
关键词：
SILICON DIOXIDE; DIELECTRIC THIN FILMS; ELECTRIC BREAKDOWN OF SOLIDS;
D O I：
10.1049/el:19950792
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The stressed-induced leakage current (SILC) in ultrathin SiO2 with thicknesses ranging from 40 to 70 Angstrom is studied. Results indicate that the trap creation mechanism responsible for SILC is hydrogen-related. Reduced SILC can be achieved in scaled SiO2 if the stress electric field is kept below a threshold value that increases with decreasing oxide thickness. Annealing of SiO2 in pure NO ambient is also shown ro be an extremely effective approach to realising SILC reduction in ultrathin SiO2.
引用
收藏
页码：1202 / 1204
页数：3
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