COMMON ORIGIN FOR STRESS-INDUCED LEAKAGE CURRENT AND ELECTRON TRAP GENERATION IN SIO2

被引：29
|
作者：
SATAKE, H
TORIUMI, A
机构：
[1] ULSI Research Laboratories, Research and Development Center, TOSHIBA Corporation, Saiwai-ku, Kawasaki 210, 1, Komukai Toshiba-cho
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 23期
关键词：
D O I：
10.1063/1.115256
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The origin of stress-induced leakage current in ultrathin SiO2 has been quantitatively investigated on the basis of the experimental results on temperature dependence of stress-induced leakage current. We found that stress-induced leakage current is dependent on stressing temperature, and that it is independent of measurement temperature. It has been quantitatively demonstrated for the first time that the activation energy of the appearance of stress-induced leakage current agrees well with that of electron trap generation so far reported. It is discussed quantitatively that stress-induced leakage current and electron trap generation have a common origin. (C) 1995 American Institute of Physics.
引用
收藏
页码：3489 / 3490
页数：2
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