Identification of stress-induced leakage current components and the corresponding trap models in SiO2 films

被引：26
|
作者：
Sakakibara, K
Ajika, N
Hatanaka, M
Miyoshi, H
Yasuoka, A
机构：
[1] ULSI Laboratory, Mitsubishi Electric Corporation
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 06期
关键词：
D O I：
10.1109/16.585555
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Time decay stress-induced leakage current (SILC) has been systematically investigated for the cases of both Fowler-Nordheim (FN) stress and substrate hot-hole stress, From the three viewpoints of the reproducibility of the current component for the gate voltage scan, the change of oxide charge during the gate voltage scan, and the resistance of the current component to thermal annealing, it has been found that tine-decay stress-induced leakage current is composed of five current components, regardless of stress type. Trap models corresponding to each current component have been proposed, In addition, it has also been proven that holes generate the electron traps related to one of those current components.
引用
收藏
页码：986 / 992
页数：7
相关论文
共 50 条
  • [1] Identification of stress-induced leakage current components and the corresponding trap models in SiO2 films (vol 44, pg 986, 1997)
    Sakakibara, K
    Ajika, N
    Hatanaka, M
    Miyoshi, H
    Yasuoka, A
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (12) : 2267 - 2273
  • [2] COMMON ORIGIN FOR STRESS-INDUCED LEAKAGE CURRENT AND ELECTRON TRAP GENERATION IN SIO2
    SATAKE, H
    TORIUMI, A
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (23) : 3489 - 3490
  • [3] Modeling and simulation of stress-induced leakage current in ultrathin SiO2 films
    Ricco, B
    Gozzi, G
    Lanzoni, M
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (07) : 1554 - 1560
  • [4] STUDY OF STRESS-INDUCED LEAKAGE CURRENT IN SCALED SIO2
    HAN, LK
    WANG, HH
    YAN, J
    KWONG, DL
    [J]. ELECTRONICS LETTERS, 1995, 31 (14) : 1202 - 1204
  • [5] STRESS-INDUCED LEAKAGE CURRENT IN ULTRATHIN SIO2-FILMS
    PATEL, NK
    TORIUMI, A
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (14) : 1809 - 1811
  • [6] A quantitative analysis of time-decay reproducible stress-induced leakage current in SiO2 films
    Sakakibara, K
    Ajika, N
    Eikyu, K
    Ishikawa, K
    Miyoshi, H
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (06) : 1002 - 1008
  • [7] Stress-induced leakage current and trap generation in HfO2 thin films
    Microelectronics Technology Laboratory , Joseph Fourier University, French National Research Centre , 17 Avenue des Martyrs, 38054 Grenoble Cedex 9, France
    不详
    [J]. J Appl Phys, 7 : 2012 - 10
  • [8] Stress-induced leakage current and trap generation in HfO2 thin films
    Mannequin, C.
    Gonon, P.
    Vallee, C.
    Latu-Romain, L.
    Bsiesy, A.
    Grampeix, H.
    Salauen, A.
    Jousseaume, V.
    [J]. JOURNAL OF APPLIED PHYSICS, 2012, 112 (07)
  • [9] Evaluation for Anomalous Stress-Induced Leakage Current of Gate SiO2 Films Using Array Test Pattern
    Kumagai, Yuki
    Teramoto, Akinobu
    Inatsuka, Takuya
    Kuroda, Rihito
    Suwa, Tomoyuki
    Sugawa, Shigetoshi
    Ohmi, Tadahiro
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (10) : 3307 - 3313
  • [10] Native and stress-induced traps in SiO2 films
    Ghetti, A
    Alam, MA
    Bude, J
    Sangiorgi, E
    Timp, G
    Weber, G
    [J]. PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4, 2000, 2000 (02): : 419 - 428
12345