Identification of stress-induced leakage current components and the corresponding trap models in SiO2 films

被引：26
|
作者：
Sakakibara, K
Ajika, N
Hatanaka, M
Miyoshi, H
Yasuoka, A
机构：
[1] ULSI Laboratory, Mitsubishi Electric Corporation
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 06期
关键词：
D O I：
10.1109/16.585555
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Time decay stress-induced leakage current (SILC) has been systematically investigated for the cases of both Fowler-Nordheim (FN) stress and substrate hot-hole stress, From the three viewpoints of the reproducibility of the current component for the gate voltage scan, the change of oxide charge during the gate voltage scan, and the resistance of the current component to thermal annealing, it has been found that tine-decay stress-induced leakage current is composed of five current components, regardless of stress type. Trap models corresponding to each current component have been proposed, In addition, it has also been proven that holes generate the electron traps related to one of those current components.
引用
收藏
页码：986 / 992
页数：7
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