Modeling and simulation of stress-induced leakage current in ultrathin SiO2 films

被引：164

作者：

Ricco, B ^{[1
]}

Gozzi, G ^{[1
]}

Lanzoni, M ^{[1
]}

机构：

[1] Univ Bologna, DEIS, I-40136 Bologna, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 07期

关键词：

MOS capacitors; reliability; SILC; thin oxides; tunnel injection;

D O I：

10.1109/16.701488

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new model for stress-induced leakage current (SILC) in ultrathin SiO2 films, that is able to explain and accurately represent the experimental data obtained with MOS capacitors fabricated with different technologies and oxide thickness in the 3-7 nm range.

引用

页码：1554 / 1560

页数：7

共 50 条

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[8] COMMON ORIGIN FOR STRESS-INDUCED LEAKAGE CURRENT AND ELECTRON TRAP GENERATION IN SIO2
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