LOW-RESISTIVITY INDIUM TIN OXIDE-FILMS BY PULSED-LASER DEPOSITION

被引：119
|
作者：
ZHENG, JP [1 ]
KWOK, HS [1 ]
机构：
[1] SUNY Buffalo, DEPT ELECT & COMP ENGN, BUFFALO, NY 14260 USA
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 01期
关键词：
D O I：
10.1063/1.109736
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Indium tin oxide films were grown by pulsed laser deposition on glass substrates. The electrical and optical properties of these films were studied. At optimized oxygen pressures, films with resistivity values of 1.4 X 10(-4) and 5.6 X 10(-4) OMEGA cm were deposited at substrate temperatures of 310 and 20-degrees-C, respectively. Films with a thickness of 180 nm had a transmission of nearly 100% for the wavelength range of 600-800 nm.
引用
收藏
页码：1 / 3
页数：3
相关论文
共 50 条
  • [1] Pulsed laser deposition of low-resistivity indium tin oxide thin films at low substrate temperature
    Adurodija, Frederick Ojo
    Izumi, Hirokazu
    Ishihara, Tsuguo
    Yoshioka, Hideki
    Matsui, Hiroshi
    Motoyama, Muneyuki
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (5 A): : 2710 - 2716
  • [2] Pulsed laser deposition of low-resistivity indium tin oxide thin films at low substrate temperature
    Adurodija, FO
    Izumi, H
    Ishihara, T
    Yoshioka, H
    Matsui, H
    Motoyama, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (5A): : 2710 - 2716
  • [3] PREPARATION OF INDIUM TIN OXIDE-FILMS AT ROOM-TEMPERATURE BY PULSED-LASER DEPOSITION
    ZHENG, JP
    KWOK, HS
    THIN SOLID FILMS, 1993, 232 (01) : 99 - 104
  • [4] Low-temperature growth of low-resistivity indium-tin-oxide thin films by pulsed laser deposition
    Adurodija, FO
    Izumi, H
    Ishihara, T
    Yoshioka, H
    Matsui, H
    Motoyama, M
    VACUUM, 2000, 59 (2-3) : 641 - 648
  • [5] LOW-RESISTIVITY AND HIGH-MOBILITY TIN-DOPED INDIUM OXIDE-FILMS
    RAUF, IA
    MATERIALS LETTERS, 1993, 18 (03) : 123 - 127
  • [6] INDIUM TIN OXIDE ON INP BY PULSED-LASER DEPOSITION
    JIA, QX
    ZHENG, JP
    KWOK, HS
    ANDERSON, WA
    THIN SOLID FILMS, 1995, 258 (1-2) : 260 - 263
  • [7] DEPOSITION OF TIN OXIDE-FILMS BY PULSED LASER EVAPORATION
    VISPUTE, RD
    GODBOLE, VP
    CHAUDHARI, SM
    KANETKAR, SM
    OGALE, SB
    JOURNAL OF MATERIALS RESEARCH, 1988, 3 (06) : 1180 - 1186
  • [8] The effect of strain on the resistivity of indium tin oxide films prepared by pulsed laser deposition
    Fang, H
    Miller, TM
    Magruder, RH
    Weller, RA
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (09) : 6194 - 6196
  • [9] Resistivity and oxygen content of indium tin oxide films deposited at room temperature by pulsed-laser ablation
    Wu, Y
    Marée, CHM
    Haglund, RF
    Hamilton, JD
    Paliza, MAM
    Huang, MB
    Feldman, LC
    Weller, RA
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (02) : 991 - 994
  • [10] Nitrogen as background gas in pulsed-laser deposition growth of indium tin oxide films at room temperature
    Morales-Paliza, MA
    Huang, MB
    Feldman, LC
    THIN SOLID FILMS, 2003, 429 (1-2) : 220 - 224
12345