A NEW TRANSIENT CAPACITANCE TECHNIQUE FOR THE DETERMINATION OF INTERFACE TRAPS IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

被引：0

作者：

VITANOV, P ^{[1
]}

EISELE, I ^{[1
]}

机构：

[1] FED ARMED FORCES UNIV,FAC ELECT ENGN,D-8014 NEUBIBERG,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.332749

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5227 / 5230

页数：4

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