The generation process of interface traps by hot-carrier injection in nanoscale metal-oxide-semiconductor field-effect transistors

被引：0
|
作者：
Hu, Ming [1 ]
Yamane, Takuya [1 ]
Tsuchiya, Toshiaki [1 ]
机构：
[1] Interdisciplinary Graduate School of Science and Engineering, Shimane University, Matsue 690-8504, Japan
来源：
Japanese Journal of Applied Physics | 2012年 / 51卷 / 2 PART 2期
关键词：
701.1 Electricity: Basic Concepts and Phenomena - 712.1 Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 761 Nanotechnology;
D O I：
02BC09
中图分类号：
学科分类号：
摘要：
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