EFFECT OF OXIDE FIELD ON HOT-CARRIER-INDUCED DEGRADATION OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：15
|
作者：
CHOI, JY
KO, PK
HU, C
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 17期
关键词：
D O I：
10.1063/1.97906
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1188 / 1190
页数：3
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