Near interface oxide trap capture kinetics in metal-oxide-semiconductor transistors: modeling and measurements

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Lab de Physique des Composants a, Semiconducteurs, Grenoble, France ^{[1
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J Appl Phys | / 11卷 / 6178-6186期

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[1] Near interface oxide trap capture kinetics in metal-oxide-semiconductor transistors: Modeling and measurements
Bauza, D
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[2] ESTIMATING OXIDE-TRAP, INTERFACE-TRAP, AND BORDER-TRAP CHARGE-DENSITIES IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
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[4] NOISE MEASUREMENTS IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BELOW SATURATION
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[5] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
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[8] Relating random telegraph signal noise in metal-oxide-semiconductor transistors to interface trap energy distribution
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[9] INTERFACE STATES IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
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[10] NOISE PARAMETERS FOR METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
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