Near interface oxide trap capture kinetics in metal-oxide-semiconductor transistors: modeling and measurements

被引：0

作者：

Lab de Physique des Composants a, Semiconducteurs, Grenoble, France ^{[1
]}

机构：

来源：

J Appl Phys | / 11卷 / 6178-6186期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[21] Carrier Velocity in Amorphous Metal-Oxide-Semiconductor Transistors
Wang, Xiao
Dodabalapur, Ananth
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (01) : 125 - 131
[22] Scalability of Schottky barrier metal-oxide-semiconductor transistors
Jang, Moongyu
NANO CONVERGENCE, 2016, 3
[23] A NEW TRANSIENT CAPACITANCE TECHNIQUE FOR THE DETERMINATION OF INTERFACE TRAPS IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
VITANOV, P
EISELE, I
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5227 - 5230
[24] Trap densities and transport properties of pentacene metal-oxide-semiconductor transistors: II-Numerical modeling of dc characteristics
Basile, A. F.
Kyndiah, A.
Biscarini, F.
Fraboni, B.
JOURNAL OF APPLIED PHYSICS, 2014, 115 (24)
[25] Oxide-trap-enhanced Coulomb energy in a metal-oxide-semiconductor system
Lu, MP
Chen, MJ
PHYSICAL REVIEW B, 2005, 72 (23)
[26] WIDEBAND REPEATERS ON BIPOLAR-TRANSISTORS AND METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
DYAKONOV, VP
STERLYAG.AA
PRIBORY I TEKHNIKA EKSPERIMENTA, 1973, (06): : 99 - 100
[27] SIMPLE TECHNIQUE FOR SEPARATING THE EFFECTS OF INTERFACE TRAPS AND TRAPPED-OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
MCWHORTER, PJ
WINOKUR, PS
APPLIED PHYSICS LETTERS, 1986, 48 (02) : 133 - 135
[28] A Surface Potential Model for Metal-Oxide-Semiconductor Transistors Operating near the Threshold Voltage
Chow, Hwang-Cherng
Lee, Bo-Wen
Cheng, Shang-Ying
Huang, Yung-Hsuan
Chang, Ruey-Dar
ELECTRONICS, 2023, 12 (20)
[29] CORRELATION BETWEEN PREIRRADIATION CHANNEL MOBILITY AND RADIATION-INDUCED INTERFACE-TRAP CHARGE IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
SCOFIELD, JH
TRAWICK, M
KLIMECKY, P
FLEETWOOD, DM
APPLIED PHYSICS LETTERS, 1991, 58 (24) : 2782 - 2784
[30] CHARACTERIZATION OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS WITH VERY THIN GATE OXIDE.
Hung, K.K.
Cheng, Y.C.
1600, (59):

← 1 2 3 4 5 →