A NEW TRANSIENT CAPACITANCE TECHNIQUE FOR THE DETERMINATION OF INTERFACE TRAPS IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

被引：0
|
作者：
VITANOV, P [1 ]
EISELE, I [1 ]
机构：
[1] FED ARMED FORCES UNIV,FAC ELECT ENGN,D-8014 NEUBIBERG,FED REP GER
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期
关键词：
D O I：
10.1063/1.332749
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5227 / 5230
页数：4
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