ROOM-TEMPERATURE BEHAVIOR IN HIGH BARRIER HETEROSTRUCTURE HOT-ELECTRON DIODES AND RELATED RESONANT TUNNELING EFFECTS

被引：0
|
作者：
HIGMAN, TK
FAVARO, ME
MILLER, LM
COLEMAN, JJ
机构：
来源：
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988 | 1989年
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中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
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页码：321 / 324
页数：4
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