ROOM-TEMPERATURE OPERATION OF A TUNNELING HOT-ELECTRON TRANSFER AMPLIFIER

被引：8
|
作者：
MOISE, TS
KAO, YC
SEABAUGH, AC
机构：
[1] Central Research Laboratories, Texas Instruments Incorporated, Dallas
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 09期
关键词：
D O I：
10.1063/1.110831
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate a tunneling hot-electron transfer amplifier that exhibits both dc and rf current gain at room temperature. The measured peak common-emitter current gain of the transistor approaches 7 while the dc differential gain is close to 10. S-parameter measurements, performed at a current density of 1.8 x 10(4) A cm-2, yield a current gain cutoff frequency of 6 GHz and a maximum frequency of oscillation of 12.5 GHz.
引用
收藏
页码：1138 / 1140
页数：3
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