EXPERIMENTAL-ANALYSIS OF RESONANT-TUNNELING HOT-ELECTRON TRANSISTORS OPERATED AT ROOM-TEMPERATURE

被引：2
|
作者：
MORI, T [1 ]
IMAMURA, K [1 ]
OHNISHI, H [1 ]
MINAMI, Y [1 ]
MUTO, S [1 ]
YOKOYAMA, N [1 ]
机构：
[1] FUJITSU LABS LTD,ATSUGI 24301,JAPAN
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 12期
关键词：
D O I：
10.1109/16.8888
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2453 / 2453
页数：1
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