ROOM-TEMPERATURE OPERATION OF A TUNNELING HOT-ELECTRON TRANSFER AMPLIFIER

被引：8
|
作者：
MOISE, TS
KAO, YC
SEABAUGH, AC
机构：
[1] Central Research Laboratories, Texas Instruments Incorporated, Dallas
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 09期
关键词：
D O I：
10.1063/1.110831
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate a tunneling hot-electron transfer amplifier that exhibits both dc and rf current gain at room temperature. The measured peak common-emitter current gain of the transistor approaches 7 while the dc differential gain is close to 10. S-parameter measurements, performed at a current density of 1.8 x 10(4) A cm-2, yield a current gain cutoff frequency of 6 GHz and a maximum frequency of oscillation of 12.5 GHz.
引用
收藏
页码：1138 / 1140
页数：3
相关论文
共 50 条
  • [31] RESONANT TUNNELING DIODES WITH ALAS BARRIER - GUIDES FOR IMPROVING ROOM-TEMPERATURE OPERATION
    VAKHSHOORI, D
    WANG, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3474 - 3476
  • [32] Towards a room-temperature polariton amplifier
    Saba, M
    Ciuti, C
    Kundermann, S
    Staehli, JL
    Deveaud, B
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (10) : S325 - S330
  • [33] Cryogenic high-frequency operation of tunnelling hot-electron transfer amplifiers
    Murti, MR
    Laskar, J
    Moise, TS
    Kao, YC
    [J]. ELECTRONICS LETTERS, 1997, 33 (08) : 711 - 713
  • [34] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIERS (THETA) - BALLISTIC GAAS DEVICES WITH CURRENT GAIN
    HEIBLUM, M
    THOMAS, DC
    KNOEDLER, CM
    NATHAN, MI
    [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 478 - 480
  • [35] HOT-ELECTRON INTERVALLEY TRANSFER IN SILICON
    NOUGIER, JP
    ROLLAND, M
    GASQUET, D
    [J]. PHYSICAL REVIEW B, 1975, 11 (04): : 1497 - 1502
  • [36] An autozeroing amplifier using pFET hot-electron injection
    Hasler, P
    Minch, BA
    Diorio, C
    Mead, C
    [J]. ISCAS 96: 1996 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - CIRCUITS AND SYSTEMS CONNECTING THE WORLD, VOL 3, 1996, : 325 - 328
  • [37] MODELING OF A RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR
    SHENG, HY
    CHUA, SJ
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (08) : 1590 - 1595
  • [38] RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR (RHET)
    YOKOYAMA, N
    IMAMURA, K
    OHNISHI, H
    MORI, T
    MUTO, S
    SHIBATOMI, A
    [J]. SOLID-STATE ELECTRONICS, 1988, 31 (3-4) : 577 - 582
  • [39] Hindered Intramolecular Electron Transfer in Room-Temperature Ionic Liquid
    Wu, Haixia
    Wang, Haixia
    Xue, Lin
    Shi, Yan
    Li, Xiyou
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2010, 114 (45): : 14420 - 14425
  • [40] INTRAMOLECULAR ELECTRON-TRANSFER IN RIGID MEDIA AT ROOM-TEMPERATURE
    JONES, WE
    CHEN, PY
    MEYER, TJ
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1992, 114 (01) : 387 - 388
12345