ROOM-TEMPERATURE BEHAVIOR IN HIGH BARRIER HETEROSTRUCTURE HOT-ELECTRON DIODES AND RELATED RESONANT TUNNELING EFFECTS

被引：0
|
作者：
HIGMAN, TK [1 ]
FAVARO, ME [1 ]
MILLER, LM [1 ]
COLEMAN, JJ [1 ]
机构：
[1] UNIV MICHIGAN,NSF ENGN RES CTR COMPOUND SEMICOND MICROELECTR,ANN ARBOR,MI 48109
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES <D> | 1989年 / 96期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Recent experimental results are described which support the validity of the proposed fundamental physical principles behind the heterostructure hot electron diode. In addition both thermionic emission and resonant tunneling results show that the GAMMA profile in AIAs/GaAs superlattices can play an important role in both carrier confinement and subband determination.
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页码：321 / 324
页数：4
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