RESONANT TUNNELING AND HOT-ELECTRON EFFECTS IN DOUBLE BARRIER - A REVIEW

被引：7
|
作者：
LIPPENS, D
DESAINTPOL, L
BOUREGBA, R
MOUNAIX, P
VINCHON, T
机构：
来源：
REVUE DE PHYSIQUE APPLIQUEE | 1989年 / 24卷 / 01期
关键词：
D O I：
10.1051/rphysap:0198900240101700
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：17 / 30
页数：14
相关论文
共 50 条
  • [1] MODELING OF A RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR
    SHENG, HY
    CHUA, SJ
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (08) : 1590 - 1595
  • [2] RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR (RHET)
    YOKOYAMA, N
    IMAMURA, K
    OHNISHI, H
    MORI, T
    MUTO, S
    SHIBATOMI, A
    [J]. SOLID-STATE ELECTRONICS, 1988, 31 (3-4) : 577 - 582
  • [3] ROOM-TEMPERATURE BEHAVIOR IN HIGH BARRIER HETEROSTRUCTURE HOT-ELECTRON DIODES AND RELATED RESONANT TUNNELING EFFECTS
    HIGMAN, TK
    FAVARO, ME
    MILLER, LM
    COLEMAN, JJ
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 321 - 324
  • [4] ROOM-TEMPERATURE BEHAVIOR IN HIGH BARRIER HETEROSTRUCTURE HOT-ELECTRON DIODES AND RELATED RESONANT TUNNELING EFFECTS
    HIGMAN, TK
    FAVARO, ME
    MILLER, LM
    COLEMAN, JJ
    [J]. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 321 - 324
  • [5] INTERFACE ROUGHNESS EFFECTS ON THE CURRENTS OF RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR
    SHENG, HY
    CHUA, SJ
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1994, 27 (08) : 1703 - 1706
  • [6] TUNNELING AND HOT-ELECTRON EFFECTS IN SINGLE BARRIER (ALGA)AS/GAAS HETEROSTRUCTURE DEVICES
    EAVES, L
    GUIMARAES, PSS
    SNELL, BR
    SHEARD, FW
    TAYLOR, DC
    TOOMBS, GA
    PORTAL, JC
    DMOWSKI, L
    SINGER, KE
    HILL, G
    PATE, MA
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (01) : 49 - 55
  • [7] A BISTABLE RESONANT-TUNNELING HOT-ELECTRON INFRARED PHOTOTRANSISTOR
    RYZHII, V
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (01) : 26 - 29
  • [8] INTEGRATION OF RESONANT-TUNNELING TRANSISTORS AND HOT-ELECTRON TRANSISTORS
    MOISE, TS
    KAO, YC
    SEABAUGH, AC
    TADDIKEN, AH
    [J]. IEEE ELECTRON DEVICE LETTERS, 1994, 15 (07) : 254 - 256
  • [9] RESONANT TUNNELING HOT-ELECTRON TRANSISTOR WITH CURRENT GAIN OF 5
    MORI, T
    OHNISHI, H
    IMAMURA, K
    MUTO, S
    YOKOYAMA, N
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (26) : 1779 - 1780
  • [10] DESIGN, FABRICATION AND OPERATION OF A HOT-ELECTRON RESONANT TUNNELING TRANSISTOR
    REDDY, UK
    MEHDI, I
    MAINS, RK
    HADDAD, GI
    [J]. SOLID-STATE ELECTRONICS, 1989, 32 (12) : 1377 - 1381
12345