PLASTICITY AND DISLOCATION MOBILITIES AT LOW-TEMPERATURE IN SILICON AND GALLIUM-ARSENIDE

被引：0
|
作者：
DEMENET, JL
BOIVIN, P
RABIER, J
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 104期
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Macroscopic and microscopic features of silicon and gallium arsenide deformed at low temperature and high stress are reported. Similarities and discrepancies are pointed out and analyzed in term of dislocation mobilities. The effect of pressure on dislocation mobility is also discussed.
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页码：415 / 420
页数：6
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