DISLOCATION ETCH-MEMORY EFFECT IN GALLIUM-ARSENIDE

被引：30
|
作者：
STIRLAND, DJ [1 ]
OGDEN, R [1 ]
机构：
[1] PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,ENGLAND
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 17卷 / 01期
关键词：
D O I：
10.1002/pssa.2210170141
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K1 / K4
页数：4
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