IMPURITY EFFECTS ON DISLOCATION VELOCITY IN GALLIUM-ARSENIDE

被引:20
|
作者
CHOI, SK
MIHARA, M
机构
关键词
D O I
10.1143/JPSJ.32.1154
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1154 / &
相关论文
共 50 条
  • [1] IMPURITY THERMOREFLECTION OF GALLIUM-ARSENIDE
    REZNICHENKO, MF
    SALMAN, EG
    VERTOPRAKHOV, VN
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (06): : 741 - 743
  • [2] IMPURITY ANALYSIS OF GALLIUM-ARSENIDE
    KRAUSKOPF, J
    MEYER, JD
    WIEDEMANN, B
    WALDSCHMIDT, M
    BETHGE, K
    WOLF, G
    SCHUTZE, W
    [J]. SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 165 - 170
  • [3] DISLOCATION STATES IN GALLIUM-ARSENIDE
    JONES, R
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (01): : 21 - 25
  • [4] A EUTECTIC DISLOCATION ETCH FOR GALLIUM-ARSENIDE
    LESSOFF, H
    GORMAN, R
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (05) : 733 - 739
  • [5] CREEP AND DISLOCATION VELOCITIES IN GALLIUM-ARSENIDE
    STEINHARDT, H
    HAASEN, P
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (01): : 93 - 101
  • [6] THE EFFECTS OF ANHARMONICITY ON THE VIBRATIONS OF HYDROGEN IMPURITY PAIRS IN GALLIUM-ARSENIDE
    NEWMAN, RC
    [J]. PHYSICA B, 1991, 170 (1-4): : 409 - 412
  • [7] IMPURITY AND DEFECT LEVELS (EXPERIMENTAL) IN GALLIUM-ARSENIDE
    MILNES, AG
    [J]. ADVANCES IN ELECTRONICS AND ELECTRON PHYSICS, 1983, 61 : 63 - 160
  • [8] KINETICS OF DECAY OF THE IMPURITY LUMINESCENCE OF GALLIUM-ARSENIDE
    GLINCHUK, KD
    LUKAT, K
    RODIONOV, VE
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (07): : 772 - 775
  • [9] MAGNETIC-IMPURITY OSCILLATIONS IN GALLIUM-ARSENIDE
    ZVEREV, VN
    [J]. JETP LETTERS, 1983, 37 (02) : 109 - 112
  • [10] IMPURITY PROFILE IN EXPITAXIAL STRUCTURES OF GALLIUM-ARSENIDE
    DYAKONOV, LI
    LIPATOVA, NI
    MASLOV, VN
    RUDA, BI
    [J]. INORGANIC MATERIALS, 1976, 12 (02) : 158 - 161