共 50 条
- [1] BROADENING OF THERMOREFLECTION SPECTRA OF DOPED GALLIUM-ARSENIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (05): : 652 - 653
- [2] IMPURITY ANALYSIS OF GALLIUM-ARSENIDE [J]. SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 165 - 170
- [3] IMPURITY AND DEFECT LEVELS (EXPERIMENTAL) IN GALLIUM-ARSENIDE [J]. ADVANCES IN ELECTRONICS AND ELECTRON PHYSICS, 1983, 61 : 63 - 160
- [4] KINETICS OF DECAY OF THE IMPURITY LUMINESCENCE OF GALLIUM-ARSENIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (07): : 772 - 775
- [8] NEW TYPE OF IMPURITY DEFECT IN SEMIINSULATING GALLIUM-ARSENIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (08): : 854 - 856
- [10] IMPURITY CONDUCTION IN MANGANESE-DOPED GALLIUM-ARSENIDE [J]. PHYSICAL REVIEW B, 1974, 10 (04): : 1760 - 1761