LOW-TEMPERATURE, MBE-GROWN GALLIUM-ARSENIDE - CRYSTALLINE-STRUCTURE, PROPERTIES, SUPERCONDUCTIVITY

被引：0

作者：

BERT, NA

VEINGER, AI

VILISOVA, MD

GOLOSHCHAPOV, SI

IVONIN, IV

KOZYREV, SV

KUNITSYN, AE

LAVRENTYEVA, LG

LUBYSHEV, DI

PREOBRAZHENSKII, VV

SEMYAGIN, BR

TRETYAKOV, VV

CHALDYSHEV, VV

YAKUBENYA, MP

机构：

来源：

FIZIKA TVERDOGO TELA | 1993年 / 35卷 / 10期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2609 / 2625

页数：17

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[1] REGENERATIVE SWITCHING DEVICE USING MBE-GROWN GALLIUM-ARSENIDE
WOOD, CEC
EASTMAN, LF
BOARD, K
SINGER, K
MALIK, R
[J]. ELECTRONICS LETTERS, 1982, 18 (15) : 676 - 677
[2] LOW-TEMPERATURE PHOTOLUMINESCENCE OF GALLIUM-ARSENIDE
STOPACHINSKY, VB
[J]. ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1977, 72 (02): : 592 - 601
[3] LOW-TEMPERATURE IRRADIATION OF GALLIUM-ARSENIDE
IVANYUKOVICH, VA
KARAS, VI
LOMAKO, VM
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (01): : 111 - 112
[4] LOW-TEMPERATURE CONTACTS TO GALLIUM-ARSENIDE
VARSHAVA, SS
VAINBERG, VV
[J]. INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1980, 23 (01) : 279 - 281
[5] STUDY OF THE CRYSTALLINE-STRUCTURE AND OF THE COMPOSITION OF PULVERIZED GALLIUM-ARSENIDE, WITH OR WITHOUT LASER ANNEALING
ALIMOUSSA, L
CARCHANO, H
FASSIFIHRI, A
LALANDE, F
LOUSSIER, R
[J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC1): : 341 - 346
[6] LOW-TEMPERATURE OPTICAL BISTABILITY OF THE PHOTOFLOW IN GALLIUM-ARSENIDE
RYABUSHKIN, OA
SERGEEV, VI
[J]. PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1987, 13 (11): : 653 - 656
[7] LOW-TEMPERATURE OHMIC CONTACTS TO GALLIUM-ARSENIDE USING IN AND AL
HEALY, MP
MATTAUCH, RJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (03) : 374 - 374
[8] LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE
MISSOUS, M
SINGER, KE
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (11) : 694 - 695
[9] PLASTICITY AND DISLOCATION MOBILITIES AT LOW-TEMPERATURE IN SILICON AND GALLIUM-ARSENIDE
DEMENET, JL
BOIVIN, P
RABIER, J
[J]. STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989, 1989, 104 : 415 - 420
[10] PLASTICITY AND DISLOCATION MOBILITIES AT LOW-TEMPERATURE IN SILICON AND GALLIUM-ARSENIDE
DEMENET, JL
BOIVIN, P
RABIER, J
[J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (104): : 415 - 420

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