PLASTICITY AND DISLOCATION MOBILITIES AT LOW-TEMPERATURE IN SILICON AND GALLIUM-ARSENIDE

被引：0

作者：

DEMENET, JL

BOIVIN, P

RABIER, J

机构：

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 104期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Macroscopic and microscopic features of silicon and gallium arsenide deformed at low temperature and high stress are reported. Similarities and discrepancies are pointed out and analyzed in term of dislocation mobilities. The effect of pressure on dislocation mobility is also discussed.

引用

页码：415 / 420

页数：6

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[1] PLASTICITY AND DISLOCATION MOBILITIES AT LOW-TEMPERATURE IN SILICON AND GALLIUM-ARSENIDE
DEMENET, JL
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[J]. STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989, 1989, 104 : 415 - 420
[2] LOW-TEMPERATURE IRRADIATION OF GALLIUM-ARSENIDE
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (01): : 111 - 112
[3] LOW-TEMPERATURE PHOTOLUMINESCENCE OF GALLIUM-ARSENIDE
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[J]. ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1977, 72 (02): : 592 - 601
[4] LOW-TEMPERATURE CONTACTS TO GALLIUM-ARSENIDE
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[J]. INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1980, 23 (01) : 279 - 281
[5] LOW-TEMPERATURE OPTICAL BISTABILITY OF THE PHOTOFLOW IN GALLIUM-ARSENIDE
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (03) : 374 - 374
[7] LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE
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SINGER, KE
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (11) : 694 - 695
[8] FRACTURE AND CRACK TIP PLASTICITY IN SILICON AND GALLIUM-ARSENIDE
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[J]. STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989, 1989, 104 : 385 - 396
[9] FRACTURE AND CRACK TIP PLASTICITY IN SILICON AND GALLIUM-ARSENIDE
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[J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (104): : 385 - 396
[10] DISLOCATION STATES IN GALLIUM-ARSENIDE
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[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (01): : 21 - 25

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