DEFECTS AND DIFFUSION IN SILICON, GERMANIUM, AND GALLIUM-ARSENIDE

被引：0
|
作者：
GOESELE, UM [1 ]
TAN, TY [1 ]
机构：
[1] DUKE UNIV,SCH ENGN,DURHAM,NC 27706
来源：
JOURNAL OF METALS | 1987年 / 39卷 / 07期
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D O I：
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中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
引用
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页码：A6 / A6
页数：1
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