PATTERNED LASER CRYSTALLIZATION OF a-Si

被引：1

作者：

Polyakov, B. ^{[1
]}

Marcins, G. ^{[1
]}

Chubarov, M. ^{[1
]}

Kuzmin, A. ^{[1
]}

Klykov, V. ^{[2
]}

Tale, I. ^{[1
]}

机构：

[1] Univ Latvia, Inst Solid State Phys, 8 Kengaraga Str, LV-1063 Riga, Latvia

[2] Sidrabe Inc, LV-1073 Riga, Latvia

来源：

LATVIAN JOURNAL OF PHYSICS AND TECHNICAL SCIENCES | 2009年 / 46卷 / 03期

关键词：

D O I：

10.2478/v10047-009-0009-y

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of amorphous Si on glass were crystallized by pulsed nano- and picosecond lasers. Two methods for creating the desired patterns of crystallized regions were used. In the former, the pattern is produced by a focused laser beam, and in the latter it is made using a prefabricated mask. The electric conductivity of crystallized films increases by more than 4 orders of magnitude in comparison with untreated amorphous films.

引用

页码：50 / 54

页数：5

共 50 条

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