PATTERNED LASER CRYSTALLIZATION OF a-Si

被引：1
|
作者：
Polyakov, B. [1 ]
Marcins, G. [1 ]
Chubarov, M. [1 ]
Kuzmin, A. [1 ]
Klykov, V. [2 ]
Tale, I. [1 ]
机构：
[1] Univ Latvia, Inst Solid State Phys, 8 Kengaraga Str, LV-1063 Riga, Latvia
[2] Sidrabe Inc, LV-1073 Riga, Latvia
来源：
LATVIAN JOURNAL OF PHYSICS AND TECHNICAL SCIENCES | 2009年 / 46卷 / 03期
关键词：
D O I：
10.2478/v10047-009-0009-y
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thin films of amorphous Si on glass were crystallized by pulsed nano- and picosecond lasers. Two methods for creating the desired patterns of crystallized regions were used. In the former, the pattern is produced by a focused laser beam, and in the latter it is made using a prefabricated mask. The electric conductivity of crystallized films increases by more than 4 orders of magnitude in comparison with untreated amorphous films.
引用
收藏
页码：50 / 54
页数：5
相关论文
共 50 条
  • [21] Dynamics of lateral grain growth during the laser interference crystallization of a-Si
    Aichmayr, G
    Toet, D
    Mulato, M
    Santos, PV
    Spangenberg, A
    Christiansen, S
    Albrecht, M
    Strunk, HP
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) : 4010 - 4023
  • [22] Excimer laser crystallization of doped and undoped a-Si:H for solar cells
    Lengsfeld, P
    Christiansen, S
    Nerding, M
    Rebien, M
    Henrion, W
    Sieber, I
    Nickel, NH
    [J]. POLYCRYSTALLINE SEMICONDUCTORS IV MATERIALS, TECHNOLOGIES AND LARGE AREA ELECTRONICS, 2001, 80-81 : 181 - 186
  • [23] Laser crystallization of thin a-Si films on plastic substrates using excimer laser treatments
    Efremov, MD
    Volodin, VA
    Fedina, LI
    Gutakovskii, AK
    Marin, DV
    Kochubei, SA
    Popov, AA
    Minakov, YA
    Ylasyuk, VN
    [J]. GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2004, 95-96 : 29 - 34
  • [24] Excimer laser crystallization of sputter deposited a-Si films on flexible substrates
    Kim, YH
    Park, SK
    Moon, DG
    Kim, WK
    Han, JI
    [J]. FLEXIBLE ELECTRONICS 2004-MATERIALS AND DEVICE TECHNOLOGY, 2004, 814 : 133 - 138
  • [25] Oxygen effect on laser crystallization of sputtered a-Si film on plastic substrate
    [J]. Kim, J.M., Institute of Image Information and Television Engineers, ITE; Society for Information Display, SID (Society for Information Display):
  • [26] Patterned structures of silicon nanocrystals prepared by pulsed laser interference crystallization of ultra-thin a-Si:H single-layer
    Wang, XW
    Qiao, F
    Zhu, LY
    Li, W
    Li, J
    Huang, XF
    Chen, KJ
    [J]. QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 2003, 737 : 419 - 424
  • [27] Ultra fast melting process in femtosecond laser crystallization of thin a-Si layer
    Izawa, Yusaku
    Tokita, Shigeki
    Fujita, Masayuki
    Norimatsu, Takayoshi
    Izawa, Yasukazu
    [J]. APPLIED SURFACE SCIENCE, 2009, 255 (24) : 9764 - 9769
  • [28] Comparison of crystallization kinetics in a-Si/Cu and a-Si/Al bilayer recording films under thermal annealing and pulsed laser irradiation
    Her, Yung-Chiun
    Chen, Chih-Wei
    Wu, Chun-Lin
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (11)
  • [29] Study of hydrogen states in a-Si:H films, dehydrogenization treatments and influence of hydrogen on nanosecond pulse laser crystallization of a-Si:H
    Volodin, V. A.
    Galkov, M. S.
    Safronova, N. A.
    Kamaev, G. N.
    Antonenko, A. H.
    Kochubey, S. A.
    [J]. INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2014, 2014, 9440
  • [30] Modeling analysis of excimer laser crystallization of a-Si films with nanosecond temperature response
    Chang, CH
    Chao, LS
    [J]. PROGRESS ON ADVANCED MANUFACTURE FOR MICRO/NANO TECHNOLOGY 2005, PT 1 AND 2, 2006, 505-507 : 283 - 288
12345