Excimer laser crystallization of doped and undoped a-Si:H for solar cells

被引：6
|
作者：
Lengsfeld, P
Christiansen, S
Nerding, M
Rebien, M
Henrion, W
Sieber, I
Nickel, NH
机构：
[1] Hahn Meitner Inst Berlin GmbH, DE-12489 Berlin, Germany
[2] Univ Erlangen Nurnberg, Inst Mat Wissensch Mikrocharakterisierung, DE-91058 Erlangen, Germany
来源：
POLYCRYSTALLINE SEMICONDUCTORS IV MATERIALS, TECHNOLOGIES AND LARGE AREA ELECTRONICS | 2001年 / 80-81卷
关键词：
doping; laser crystallization; polycrystalline silicon; texture;
D O I：
10.4028/www.scientific.net/SSP.80-81.181
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work investigates the structural properties of undoped and heavily doped laser crystallized silicon films. Undoped films show good structural properties. The preferential orientation of large grained films is ( 1 1 1) for undoped, moderately and heavily n- and p-type films. Heavy doping significantly influences the crystallization process.
引用
收藏
页码：181 / 186
页数：6
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