Semiconductor laser crystallization of a-Si:H

被引：0
|
作者：
Nayak, BK [1 ]
McLeskey, J [1 ]
Selvan, A [1 ]
Eaton, B [1 ]
Gupta, MC [1 ]
机构：
[1] Old Dominion Univ, Appl Res Ctr, Newport News, VA 23606 USA
来源：
PHOTON PROCESSING IN MICROELECTRONICS AND PHOTONICS II | 2003年 / 4977卷
关键词：
a-Si; a-Si : H; laser crystallization; diode laser; solar cells; semiconductor laser;
D O I：
10.1117/12.479573
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Results of semiconductor laser crystallization of a-Si:H on transparent conducting fluoride doped tin oxide coated glass are discussed. A-Si:H films were prepared by plasma enhanced chemical vapor deposition. Laser crystallized films of a-Si:H were characterized by X-ray diffraction and optical microscopy. Semiconductor laser crystallization process as compared to well-established excimer laser offers low cost large area technology for solar cell, display and other applications. Longer wavelength of diode lasers (805 nm) allows light to penetrate deeper in the films for crystallization of thicker films required for enhanced light absorption.
引用
收藏
页码：377 / 380
页数：4
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