Advanced 405 nm laser diodes crystallization of a-Si film for the fabrication of microcrystalline-Si TFTs

被引：0
|
作者：
Morimoto, Kiyoshi [1 ]
Suzuki, Nobuyasu [1 ]
Yuri, Masaaki [2 ]
Yamanaka, Kazuhiko [2 ]
Milliez, Janet [3 ]
Liu, Xinbing [3 ]
机构：
[1] Panasonic Corp, Adv Tech Res Labs, 3-4 Hikaridai, Uji, Kyoto 6190237, Japan
[2] Panasonic Corp, Semicond Co, Nagaokakyo, Kyoto 6178520, Japan
[3] Panasonic R&D Co Amer, Panason Boston Lab, Newton, MA 02459 USA
来源：
IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2010年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have proposed a novel crystallization method of a-Si using 405 nm laser diodes and applied it to the fabrication of bottom gate (BG) microcrystalline (mu c)-Si TFTs for the first time. High performance BG mu c-Si TFTs were successfully demonstrated and the advantage of a 405 nm wavelength was also verified with heat flow simulation.
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页码：611 / 614
页数：4
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