Advanced 405 nm laser diodes crystallization of a-Si film for the fabrication of microcrystalline-Si TFTs

被引：0

作者：

Morimoto, Kiyoshi ^{[1
]}

Suzuki, Nobuyasu ^{[1
]}

Yuri, Masaaki ^{[2
]}

Yamanaka, Kazuhiko ^{[2
]}

Milliez, Janet ^{[3
]}

Liu, Xinbing ^{[3
]}

机构：

[1] Panasonic Corp, Adv Tech Res Labs, 3-4 Hikaridai, Uji, Kyoto 6190237, Japan

[2] Panasonic Corp, Semicond Co, Nagaokakyo, Kyoto 6178520, Japan

[3] Panasonic R&D Co Amer, Panason Boston Lab, Newton, MA 02459 USA

来源：

IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have proposed a novel crystallization method of a-Si using 405 nm laser diodes and applied it to the fabrication of bottom gate (BG) microcrystalline (mu c)-Si TFTs for the first time. High performance BG mu c-Si TFTs were successfully demonstrated and the advantage of a 405 nm wavelength was also verified with heat flow simulation.

引用

页码：611 / 614

页数：4

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