SELFALIGNED INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS

被引：2
|
作者：
FEYGENSON, A
TEMKIN, H
TSANG, WT
YANG, L
YADVISH, RD
SCORTINO, PF
机构：
[1] AT&T Bell Laboratories, New Jersey
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 13期
关键词：
TRANSISTORS; BIPOLAR DEVICES; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19910697
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InGaAs/InP heterostructure bipolar transistors have been realised using a new selfaligned process. Transistor wafers were grown by chemical beam epitaxy. Ideality factors close to unity were measured for emitter-base and collector-base diodes. The resulting devices exhibit nearly constant gain over four orders of magnitude of collector current densities, from j = 1.5 x 10(-4) A/cm2 to 1.5 A/cm2.
引用
收藏
页码：1116 / 1118
页数：3
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