PHYSICS OF INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS FOR EHF APPLICATIONS

被引：0
|
作者：
MEYYAPPAN, M
OSMAN, MA
ANDREWS, GA
KRESKOVSKY, JP
GRUBIN, HL
机构：
来源：
FIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES | 1989年 / 1144卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：602 / 609
页数：8
相关论文
共 50 条
  • [1] SELFALIGNED INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS
    FEYGENSON, A
    TEMKIN, H
    TSANG, WT
    YANG, L
    YADVISH, RD
    SCORTINO, PF
    [J]. ELECTRONICS LETTERS, 1991, 27 (13) : 1116 - 1118
  • [2] SUBPICOSECOND INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS
    CHEN, YK
    NOTTENBURG, RN
    PANISH, MB
    HAMM, RA
    HUMPHREY, DA
    [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (06) : 267 - 269
  • [3] SCALED ALINAS/INGAAS AND INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS
    JALALI, B
    NOTTENBURG, RN
    CHEN, YK
    LEVI, AFJ
    CHO, AY
    PANISH, MB
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2602 - 2602
  • [4] INGAAS INP COMPOSITE COLLECTOR HETEROSTRUCTURE BIPOLAR-TRANSISTORS
    FEYGENSON, A
    RITTER, D
    HAMM, RA
    SMITH, PR
    MONTGOMERY, RK
    YADVISH, RD
    TEMKIN, H
    PANISH, MB
    [J]. ELECTRONICS LETTERS, 1992, 28 (07) : 607 - 609
  • [5] MICROWAVE NOISE PERFORMANCE OF INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS
    CHEN, YK
    NOTTENBURG, RN
    PANISH, MB
    HAMM, RA
    HUMPHREY, DA
    [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (10) : 470 - 472
  • [6] INP/INGAAS DOUBLE HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN BY MBE
    SCHUITEMAKER, P
    CLAXTON, PA
    ROBERTS, JS
    PLANT, TK
    HOUSTON, PA
    [J]. ELECTRONICS LETTERS, 1986, 22 (15) : 781 - 783
  • [7] INVESTIGATION OF INJECTION MECHANISMS FOR INGAAS/INP DOUBLE HETEROSTRUCTURE BIPOLAR-TRANSISTORS
    ELSHABINIRIAD, A
    HE, JQ
    [J]. SOLID-STATE ELECTRONICS, 1989, 32 (10) : 853 - 860
  • [8] HIGH-CURRENT-GAIN SUBMICROMETER INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS
    NOTTENBURG, RN
    CHEN, YK
    PANISH, MB
    HAMM, R
    HUMPHREY, DA
    [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (10) : 524 - 526
  • [9] ON THE STORAGE TIME OF INGAAS/INP BIPOLAR-TRANSISTORS
    SU, LM
    MEKONNEN, G
    GROTE, N
    [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) : 554 - 556
  • [10] INP-BASED HETEROSTRUCTURE BIPOLAR-TRANSISTORS
    NOTTENBURG, RN
    LEVI, AFJ
    CHEN, YK
    JALALI, B
    PANISH, MB
    CHO, AY
    [J]. GAAS IC SYMPOSIUM /: TECHNICAL DIGEST 1989, 1989, : 135 - 138
12345