INP-BASED HETEROSTRUCTURE BIPOLAR-TRANSISTORS

被引：0
|
作者：
NOTTENBURG, RN
LEVI, AFJ
CHEN, YK
JALALI, B
PANISH, MB
CHO, AY
机构：
来源：
GAAS IC SYMPOSIUM /: TECHNICAL DIGEST 1989 | 1989年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：135 / 138
页数：4
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