MICROWAVE NOISE PERFORMANCE OF INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS

被引：26
|
作者：
CHEN, YK
NOTTENBURG, RN
PANISH, MB
HAMM, RA
HUMPHREY, DA
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 10期
关键词：
D O I：
10.1109/55.43103
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：470 / 472
页数：3
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