MICROWAVE-POWER INP/INGAAS/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：6

作者：

SONG, JI ^{[1
]}

HONG, WP ^{[1
]}

BHAT, R ^{[1
]}

CHOUGH, KB ^{[1
]}

HAYES, JR ^{[1
]}

SUGENG, B ^{[1
]}

WEI, CJ ^{[1
]}

HWANG, JCM ^{[1
]}

机构：

[1] LEHIGH UNIV,BETHLEHEM,PA 18015

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 08期

关键词：

BIPOLAR DEVICES; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS; MICROWAVE DEVICES;

D O I：

10.1049/el:19930484

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first demonstration of the microwave power performance of an InP/InGaAs/InP double-heterojunction bipolar transistor (DHBT) is reported. A collector-emitter breakdown voltage in excess of 14 V was achieved with a current gain of 70. A maximum output power density of approximately 1 W/mm emitter length was measured at 5 GHz with a power gain of 8 dB. The results show the significant potential of InP based DHBTs for microwave power applications.

引用

页码：724 / 725

页数：2

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