MICROWAVE NOISE PERFORMANCE OF INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS

被引：26

|

作者：

CHEN, YK

NOTTENBURG, RN

PANISH, MB

HAMM, RA

HUMPHREY, DA

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 10期

关键词：

D O I：

10.1109/55.43103

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：470 / 472

页数：3

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