ON THE STORAGE TIME OF INGAAS/INP BIPOLAR-TRANSISTORS

被引：4
|
作者：
SU, LM [1 ]
MEKONNEN, G [1 ]
GROTE, N [1 ]
机构：
[1] HEINRICH HERTZ INST NACHRICHTENTECH,BERLIN,FED REP GER
来源：
IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 10期
关键词：
D O I：
10.1109/EDL.1985.26227
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：554 / 556
页数：3
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