AU SCHOTTKY-BARRIER DIODES ON BETA-SIC THIN-FILMS DEPOSITED ON SILICON SUBSTRATES BY REACTIVE MAGNETRON SPUTTERING TECHNIQUE

被引：4

作者：

WAHAB, Q

KARLSTEEN, M

WILLANDER, M

SUNDGREN, JE

机构：

[1] Department of Physics Linköping University

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1991年 / 20卷 / 11期

关键词：

BETA-SIC; REACTIVE MAGNETRON SPUTTERING; SCHOTTKY DIODE;

D O I：

10.1007/BF02816029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Beta-SiC thin films have been grown on (100) silicon substrates using reactive magnetron sputtering of a silicon target in an Ar/CH4 mixed plasma. For the first time it has been possible to make gold Schottky diodes on beta-SiC grown by reactive magnetron sputtering. Current-voltage measurements showed an ideality factor of 1.27 and a leakage current density of 4-mu-A/cm2. Capacitance-voltage measurements gave a barrier height of 1.04 eV. The static dielectric constant for beta-SiC was determined to be 9.

引用

页码：899 / 901

页数：3

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