AU SCHOTTKY-BARRIER DIODES ON BETA-SIC THIN-FILMS DEPOSITED ON SILICON SUBSTRATES BY REACTIVE MAGNETRON SPUTTERING TECHNIQUE

被引：4

作者：

WAHAB, Q

KARLSTEEN, M

WILLANDER, M

SUNDGREN, JE

机构：

[1] Department of Physics Linköping University

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1991年 / 20卷 / 11期

关键词：

BETA-SIC; REACTIVE MAGNETRON SPUTTERING; SCHOTTKY DIODE;

D O I：

10.1007/BF02816029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Beta-SiC thin films have been grown on (100) silicon substrates using reactive magnetron sputtering of a silicon target in an Ar/CH4 mixed plasma. For the first time it has been possible to make gold Schottky diodes on beta-SiC grown by reactive magnetron sputtering. Current-voltage measurements showed an ideality factor of 1.27 and a leakage current density of 4-mu-A/cm2. Capacitance-voltage measurements gave a barrier height of 1.04 eV. The static dielectric constant for beta-SiC was determined to be 9.

引用

页码：899 / 901

页数：3

共 50 条

[21] STRUCTURAL AND OPTICAL PROPERTIES OF SILICON CARBONITRIDE THIN FILMS DEPOSITED BY REACTIVE DC MAGNETRON SPUTTERING
Agirseven, Okan
Tavsanoglu, Tolga
Zayim, Esra Ozkan
Yucel, Onuralp
TMS 2012 141ST ANNUAL MEETING & EXHIBITION - SUPPLEMENTAL PROCEEDINGS, VOL 1: MATERIALS PROCESSING AND INTERFACES, 2012, : 595 - 602
[22] MICRO-CRYSTALINE SILICON THIN FILMS DEPOSITED BY THE REACTIVE RF MAGNETRON SPUTTERING SYSTEM
Oyama, Akinori
Nakamura, Isao
Isomura, Masao
CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2, 2006, : 1684 - +
[23] Properties of TiO2 thin films deposited by rf reactive magnetron sputtering on biased substrates
Nezar, Sawsen
Saoula, Nadia
Sali, Samira
Faiz, Mohammed
Mekki, Mogtaba
Laoufi, Nadia Aicha
Tabet, Nouar
APPLIED SURFACE SCIENCE, 2017, 395 : 172 - 179
[24] Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering
Valcheva, E.
Birch, J.
Persson, P. O. A.
Tungasmita, S.
Hultman, L.
JOURNAL OF APPLIED PHYSICS, 2006, 100 (12)
[25] Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering
Valcheva, E.
Birch, J.
Persson, P.O.A.
Tungasmita, S.
Hultman, L.
Journal of Applied Physics, 2006, 100 (12):
[26] SYNTHESIS OF BETA-SIC THIN-FILMS FOR HIGH-TEMPERATURE SENSORS BY THE ACTIVATED REACTIVE EVAPORATION PROCESS
CHA, YHC
JOU, S
PRAKASH, S
DOERR, HJ
BUNSHAH, RF
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1993, 163 (02): : 207 - 210
[27] Influence of annealing on electronic properties of thin AlN films deposited by magnetron sputtering method on silicon substrates
Firek, P.
Waskiewicz, M.
Zdunek, K.
Szmidt, J.
Chodun, R.
Nowakowska-Langier, K.
PHOTONICS APPLICATIONS IN ASTRONOMY, COMMUNICATIONS, INDUSTRY, AND HIGH-ENERGY PHYSICS EXPERIMENTS 2019, 2019, 11176
[28] Influence of Substrate Temperature on Microstructure of Zirconium Silicon Nitride Thin Films Deposited by Reactive Magnetron Sputtering
Oliveira, F. S.
Dias, I. L.
Araujo, P. L. L.
Ramirez, D. A.
Neto, P. C. Silva
Hubler, R.
Mendes, F. M. T.
Damasceno, I. Z.
Tentardini, E. K.
MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS, 2023, 26
[29] Composition and optical properties tunability of hydrogenated silicon carbonitride thin films deposited by reactive magnetron sputtering
Bachar, A.
Bousquet, A.
Mehdi, H.
Monier, G.
Robert-Goumet, C.
Thomas, L.
Belmahi, M.
Goullet, A.
Sauvage, T.
Tomasella, E.
APPLIED SURFACE SCIENCE, 2018, 444 : 293 - 302
[30] Structure and Optical Properties of Silicon Oxycarbide Films Deposited by Reactive RF Magnetron Sputtering Using a SiC Target
Miyazaki, Hidetoshi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (11) : 8287 - 8290

← 1 2 3 4 5 →