Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering

被引：0
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作者：
Valcheva, E. [1 ,2 ]
Birch, J. [1 ]
Persson, P.O.A. [1 ]
Tungasmita, S. [1 ]
Hultman, L. [1 ]
机构：
[1] Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-581 83, Sweden
[2] Sofia University, Department of Solid State Physics, Sofia, Bulgaria
来源：
Journal of Applied Physics | 2006年 / 100卷 / 12期
关键词：
Epitaxial domain formation and textured growth in AlN thin films deposited on Si(001) substrates by reactive magnetron sputtering was studied by transmission electron microscopy and x-ray diffraction. The films have a wurtzite type structure with a crystallographic orientation relationship to the silicon substrate of AlN (0001) Si (001). The AlN film is observed to nucleate randomly on the Si surface and grows three dimensionally; forming columnar domains. The in-plane orientation reveals four domains with their a axes rotated by 15° with respect to each other: AlN 〈11 2- 0〉 Si [110; AlN; 〈01; 1-; 0〉; Si; 110; 〈11; 2-; 100; and AlN 〈01 1- 0〉 Si [100] An explanation of the growth mode based on the large lattice mismatch and the topology of the substrate surface is proposed. © 2006 American Institute of Physics;
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