AU SCHOTTKY-BARRIER DIODES ON BETA-SIC THIN-FILMS DEPOSITED ON SILICON SUBSTRATES BY REACTIVE MAGNETRON SPUTTERING TECHNIQUE

Beta-SiC thin films have been grown on (100) silicon substrates using reactive magnetron sputtering of a silicon target in an Ar/CH4 mixed plasma. For the first time it has been possible to make gold Schottky diodes on beta-SiC grown by reactive magnetron sputtering. Current-voltage measurements showed an ideality factor of 1.27 and a leakage current density of 4-mu-A/cm2. Capacitance-voltage measurements gave a barrier height of 1.04 eV. The static dielectric constant for beta-SiC was determined to be 9.