NITROGEN EFFECT ON OXYGEN PRECIPITATION IN CZOCHRALSKI SILICON

被引：132
|
作者：
SHIMURA, F
HOCKETT, RS
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 03期
关键词：
D O I：
10.1063/1.96564
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：224 / 226
页数：3
相关论文
共 50 条
  • [1] Effect of iron on oxygen precipitation in nitrogen-doped Czochralski silicon
    Zhang, XW
    Yang, DR
    Fan, RX
    Zhang, JX
    Que, DL
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (10) : 5502 - 5505
  • [2] Oxygen precipitation in nitrogen-doped Czochralski silicon
    Yang, DR
    Ma, XY
    Fan, RX
    Zhang, JX
    Li, LB
    Que, DL
    [J]. PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 308 - 311
  • [3] Germanium effect on oxygen precipitation in Czochralski silicon
    Li, H
    Yang, DR
    Ma, XY
    Yu, XG
    Que, DL
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (08) : 4161 - 4165
  • [4] Effect of carbon on oxygen precipitation in Czochralski silicon
    Londos, CA
    Potsidi, MS
    Emtsev, VV
    [J]. PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 6, 2005, 2 (06): : 1963 - 1967
  • [5] OXYGEN PRECIPITATION IN CZOCHRALSKI SILICON
    CRAVEN, RA
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C93 - C93
  • [6] Oxygen precipitation in heavily phosphorus-doped Czochralski silicon: effect of nitrogen codoping
    Zeng, Yuheng
    Ma, Xiangyang
    Chen, Jiahe
    Tian, Daxi
    Gong, Longfei
    Yang, Deren
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (10)
  • [7] Effect of nitrogen on oxygen precipitation in Czochralski silicon during high-temperature annealing
    Jiang, L
    Yang, DR
    Yu, XG
    Ma, XY
    Xu, J
    Que, DL
    [J]. ACTA PHYSICA SINICA, 2003, 52 (08) : 2000 - 2004
  • [8] CARBON ENHANCEMENT EFFECT ON OXYGEN PRECIPITATION IN CZOCHRALSKI SILICON
    SHIMURA, F
    [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) : 3251 - 3254
  • [9] EFFECT OF OXYGEN PRECIPITATION ON PHOSPHORUS DIFFUSION IN CZOCHRALSKI SILICON
    AHN, ST
    KENNEL, HW
    PLUMMER, JD
    TILLER, WA
    REK, ZU
    STOCK, SR
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (01) : 34 - 36
  • [10] Enhancement effect of germanium on oxygen precipitation in Czochralski silicon
    Chen, JH
    Yang, DR
    Li, H
    Ma, XY
    Que, DL
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (07)
12345