Effect of nitrogen on oxygen precipitation in Czochralski silicon during high-temperature annealing

被引：4

作者：

Jiang, L ^{[1
]}

Yang, DR ^{[1
]}

Yu, XG ^{[1
]}

Ma, XY ^{[1
]}

Xu, J ^{[1
]}

Que, DL ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat Sci, Hangzhou 310027, Peoples R China

来源：

ACTA PHYSICA SINICA | 2003年 / 52卷 / 08期

关键词：

Czochralski silicon; nitrogen; doping; oxygen precipitation;

D O I：

10.7498/aps.52.2000

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effect of nitrogen on the oxygen precipitation during high-temperature annealing in Czoehralski silicon was investigated. After annealing under different conditions, the variation of oxygen precipitation and the bulk microdefects (BMDs) density with annealing time at high temperatures was measured, and transmission electronic microscope was used to observe the microstructure of oxygen precipitates. It was found that nitrogen doping strongly enhanced oxygen precipitation during high-temperature annealing; furthermore, the densities of BMDs in the annealed NCZ samples were higher than those in the corresponding CZ ones. Therefore, it is considered that the nitrogen can react with vacancy and oxygen to form N-V-O complexes to enhance the nucleation of oxygen precipitates, and the oxygen precipitates are plates with strong inner stress.

引用

页码：2000 / 2004

页数：5

共 11 条

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