Oxygen precipitation in nitrogen-doped Czochralski silicon

被引：44
|
作者：
Yang, DR [1 ]
Ma, XY [1 ]
Fan, RX [1 ]
Zhang, JX [1 ]
Li, LB [1 ]
Que, DL [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat Sci, Hangzhou 310027, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷
基金：
高等学校博士学科点专项科研基金;
关键词：
oxygen precipitation; nitrogen; silicon;
D O I：
10.1016/S0921-4526(99)00453-6
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Oxygen precipitation in nitrogen-doped Czochralski (NCZ) silicon has been investigated by one-step and two-step annealing. It was found that nitrogen in NCZ silicon enhanced oxygen precipitation at lower temperatures ( < 750 degrees C), while it had no influence on oxygen precipitation at higher temperatures. We considered that nitrogen could enhance the nucleation of oxygen precipitation, rather than its growth. After two-step annealing, the samples were observed by means of a transmission Electronic Microscope (TEM). New morphology of oxygen precipitates was revealed. The size of the oxygen precipitates was about 300-500 A. It is suggested that nitrogen interacted with oxygen to form nitrogen-oxygen complexes as heterogeneous nuclei which enhanced nucleation of oxygen precipitates. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：308 / 311
页数：4
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