NITROGEN EFFECT ON OXYGEN PRECIPITATION IN CZOCHRALSKI SILICON

被引：132
|
作者：
SHIMURA, F
HOCKETT, RS
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 03期
关键词：
D O I：
10.1063/1.96564
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：224 / 226
页数：3
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