Oxygen precipitation in heavily phosphorus-doped Czochralski silicon: effect of nitrogen codoping

被引：2
|
作者：
Zeng, Yuheng [1 ,2 ]
Ma, Xiangyang [1 ,2 ]
Chen, Jiahe [1 ,2 ]
Tian, Daxi [1 ,2 ,3 ]
Gong, Longfei [3 ]
Yang, Deren [1 ,2 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[2] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
[3] Ningbo QL Elect Co Ltd, Ningbo 315800, Zhejiang, Peoples R China
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2009年 / 24卷 / 10期
关键词：
COMPLEXES; DEFECTS;
D O I：
10.1088/0268-1242/24/10/105030
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Oxygen precipitation (OP) in the conventional and nitrogen-codoped heavily phosphorous (P)-doped Czochralski silicon (CZ-Si) wafers subjected to various low- (650-850 degrees C) and high-temperature (1050 degrees C) two-step annealing conditions have been comparatively investigated. It was found that the nucleation annealing at 650 degrees C led to remarkable OP and the resulting bulk micro defect densities were nearly the same in both kinds of silicon wafers. While in the case with the nucleation annealing at 750 or 850 degrees C, the conventional heavily P-doped CZ-Si featured slight OP, in contrast to the nitrogen-codoped counterpart that put up considerably intense OP. The heavily P doping is believed to exert a significant enhancement effect on oxygen precipitate nucleation at 650 degrees C but not at 750 and 850 degrees C, while the nitrogen codoping offers heterogeneous centers for oxygen precipitate nucleation at 750 or 850 degrees C. It is reasonably believed that nitrogen codoping is also an effective pathway to enhance oxygen precipitation in heavily P-doped CZ-Si.
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页数：5
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