THEORY OF NEGATIVE-RESISTANCE OF JUNCTION FIELD-EFFECT TRANSISTORS

被引：8
|
作者：
MIZUNO, H
KANO, G
TAKAGI, H
TERAMOTO, I
机构：
[1] MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
[2] MATSUSHITA ELECTR CORP,BOARD MANAGEMENT,TAKATSUKI,OSAKA,JAPAN
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1976年 / 11卷 / 02期
关键词：
D O I：
10.1109/JSSC.1976.1050720
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：313 / 317
页数：5
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