OBSERVATION OF NEGATIVE DIFFERENTIAL RESISTANCE IN GAAS FIELD-EFFECT TRANSISTORS

被引：3
|
作者：
MUZUMDAR, P
MIRCHANDANI, K
MILSHTEIN, S
机构：
[1] Electrical Engineering Department, University of Lowell, Lowell
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 02期
关键词：
D O I：
10.1063/1.349697
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Negative differential resistance (NDR) is observed in GaAs metal-semiconductor field-effect transistors. The device under test is a GaAs dual-gate device. The observation of NDR is attributed to intervalley transfer in GaAs. The characteristic is field controlled and is n type in shape. NDR can be controlled by independent control of the two gates. It is also seen for a fixed ratio of gate voltages.
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页码：1063 / 1065
页数：3
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