A FIELD-EFFECT TRANSISTOR WITH A NEGATIVE DIFFERENTIAL RESISTANCE

被引：54
|
作者：
KASTALSKY, A
LURYI, S
GOSSARD, AC
HENDEL, R
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 02期
关键词：
D O I：
10.1109/EDL.1984.25831
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：57 / 60
页数：4
相关论文
共 50 条
  • [1] NEW NEGATIVE DIFFERENTIAL RESISTANCE EFFECTS IN THE NEGATIVE-RESISTANCE FIELD-EFFECT TRANSISTOR
    KASTALSKY, A
    MILSHTEIN, M
    SHANTHARAMA, LG
    HARBISON, J
    FLOREZ, L
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (05) : 2186 - 2188
  • [2] Negative differential resistance in graphenebased ballistic field-effect transistor with oblique top gate
    Dragoman, Mircea
    Dinescu, Adrian
    Dragoman, Daniela
    [J]. NANOTECHNOLOGY, 2014, 25 (41)
  • [3] Negative differential resistance of a ridge-type InGaAs quantum wire field-effect transistor
    Sugaya, T
    Kim, SJ
    Nakagawa, T
    Sugiyama, Y
    Ogura, M
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03): : 1680 - 1683
  • [4] NEGATIVE TRANSCONDUCTANCE AND NEGATIVE DIFFERENTIAL RESISTANCE IN A GRID-GATE MODULATION-DOPED FIELD-EFFECT TRANSISTOR
    ISMAIL, K
    CHU, W
    YEN, A
    ANTONIADIS, DA
    SMITH, HI
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (05) : 460 - 462
  • [5] P-CHANNEL NEGATIVE-RESISTANCE FIELD-EFFECT TRANSISTOR
    FAVARO, ME
    MILLER, LM
    BRYAN, RP
    ALWAN, JJ
    COLEMAN, JJ
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (11) : 1058 - 1060
  • [6] OBSERVATION OF NEGATIVE DIFFERENTIAL RESISTANCE IN GAAS FIELD-EFFECT TRANSISTORS
    MUZUMDAR, P
    MIRCHANDANI, K
    MILSHTEIN, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (02) : 1063 - 1065
  • [7] The ferroelectric field-effect transistor with negative capacitance
    I. Luk’yanchuk
    A. Razumnaya
    A. Sené
    Y. Tikhonov
    V. M. Vinokur
    [J]. npj Computational Materials, 8
  • [8] Gate-length dependence of negative differential resistance in InGaAs/InAlAs quantum well field-effect transistor
    Kim, SJ
    Sugaya, T
    Ogura, M
    Sugiyama, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (11): : 6152 - 6156
  • [9] The ferroelectric field-effect transistor with negative capacitance
    Luk'yanchuk, I
    Razumnaya, A.
    Sene, A.
    Tikhonov, Y.
    Vinokur, V. M.
    [J]. NPJ COMPUTATIONAL MATERIALS, 2022, 8 (01)
  • [10] DIFFERENTIAL NEGATIVE-RESISTANCE OF N-TYPE INVERSION LAYER IN SILICON MOS FIELD-EFFECT TRANSISTOR
    KATAYAMA, Y
    YOSHIDA, I
    KOMATSUBARA, KF
    KOTERA, N
    [J]. APPLIED PHYSICS LETTERS, 1972, 20 (01) : 31 - +
12345